ROHM Semiconductor presents its latest Power modules for high-reliable, high-speed switching as well as SiC MOSFET driving. All devices not only offer optimized power management features but also innovative and compact package design tailored to the needs of a wide range of applications, e.g. large power supplies, inverters, industrial equipment, servers, and others.
Highlights Full SiC 1200V/300A Power Modules
The new BSM300D12P2E001 is especially suitable for high power applications such as large-capacity power supplies for industrial equipment due to its 300A rated current.
In addition, 77% lower switching loss vs. conventional IGBT modules enables high-frequency operation, contributing to smaller cooling countermeasures and peripheral components. ROHM included a new package design that is able to minimize the impact of surge voltage during switching.
An original electric field mitigation structure, along with a novel screening method, is utilized to provide high reliability, making it a perfect replacement for IGBT modules with higher maximum current rating.
