With the aim to drive energy efficient innovations, On Semiconductor has extended its SiC diode portfolio by introducing its newest family of 650 V silicon carbide (SiC) Schottky diodes. The diodes’ cutting edge, silicon carbide technology provides higher switching capabilities with lower power losses and effortless paralleling of devices. On Semiconductor’s newly released family of 650 V SiC diodes includes surface mount and through hole packages ranging from 6 Amperes to 50 Amperes (A). All of the diodes provide zero reverse recovery, low forward voltage, temperature independent current stability, high surge capacity and positive temperature coefficient.
Combined system benefit
The new diodes are aimed at engineers designing PFC and boost converters for various applications including solar PV inverters, EV/HEV chargers, telecom power and data center power supplies while facing challenges to deliver smaller footprints at higher efficiencies. The 650 V devices offer the combined system benefits of higher efficiency, higher power density, smaller footprints and enhanced reliability.