15 V Gallium Nitride Transistor

Suitable for ToF applications

  • 15 V Gallium Nitride Transistor
    15 V Gallium Nitride Transistor

EPC (Efficient Power Conversion) expands AEC Q101 product family with the EPC2216, a 15 V gallium nitride transistor optimized for high-performance lidar systems where increased accuracy is critical, as in self-driving cars and other ToF (Time-of-Flight) applications including facial recognition, warehouse automation, drones and mapping. This 15 V, 26 mΩ, eGaN FET with a 28 A pulsed current rating in a tiny 1.02 mm2 footprint fits the use for firing the lasers in lidar systems, because the FET can be triggered to create high-current with extremely short pulse widths.  


Time-of-Flight Lidar Systems can “see” better thanks to Automotive Qualified eGaN FET, 15 V EPC2216


EPC’s eGaN FETs complete AEC Q101 testing through rigorous environmental and bias-stress testing, including humidity testing with bias (H3TRB), high temperature reverse bias (HTRB), high temperature gate bias (HTGB), temperature cycling (TC), as well as several other tests. These eGaN devices are produced in facilities certified to the Automotive Quality Management System Standard IATF 16949.

Graduated in political sciences and international relations in Paris, Anis joined the team in early 2019. Editor for IEN Europe and the new digital magazine AI IEN, he is a new tech enthusiast. Also passionate about sports, music, cultures and languages. 

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