Infineon Technologies. Using a new aluminum nitride (AIN) ceramic, the 1200 V devices are designed in half-bridge configuration with an on-state resistance (RDS(on)) of 11 mΩ in an EasyDUAL 1B package and 6 mΩ in an EasyDUAL 2B package. These features enable high-power density applications including solar systems, uninterruptible power supplies, auxiliary inverters, energy storage systems and electric vehicle chargers.
Conception featuring superior gate-oxide reliability
The thermal conductivity of the DCB material improves the thermal resistance to the heat sink (R thJH) permitting a reduction up to 40%. Thanks to the CoolSiC MOSFET technology, the EasyDUAL modules FF11MR12W1M1_B70 and FF6MR12W2M1_B70 offer an increase of the output power or reduces the junction temperatures.
