Infineon Technologies. Using a new aluminum nitride (AIN) ceramic, the 1200 V devices are designed in half-bridge configuration with an on-state resistance (RDS(on)) of 11 mΩ in an EasyDUAL 1B package and 6 mΩ in an EasyDUAL 2B package. These features enable high-power density applications including solar systems, uninterruptible power supplies, auxiliary inverters, energy storage systems and electric vehicle chargers.
The thermal conductivity of the DCB material improves the thermal resistance to the heat sink (R thJH) permitting a reduction up to 40%. Thanks to the CoolSiC MOSFET technology, the EasyDUAL modules FF11MR12W1M1_B70 and FF6MR12W2M1_B70 offer an increase of the output power or reduces the junction temperatures.