High-Performance Ceramic and Compact Design on Power Modules

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Infineon Technologies AG improved the EasyDUAL™ CoolSiC™ MOSFET modules for high-power density applications

Electronics & Electricity

High-Performance Ceramic and Compact Design on Power Modules
High-Performance Ceramic and Compact Design on Power Modules

Infineon Technologies. Using a new aluminum nitride (AIN) ceramic, the 1200 V devices are designed in half-bridge configuration with an on-state resistance (RDS(on)) of 11 mΩ in an EasyDUAL 1B package and 6 mΩ in an EasyDUAL 2B package. These features enable high-power density applications including solar systems, uninterruptible power supplies, auxiliary inverters, energy storage systems and electric vehicle chargers.

Conception featuring superior gate-oxide reliability

The thermal conductivity of the DCB material improves the thermal resistance to the heat sink (R thJH) permitting a reduction up to 40%. Thanks to the CoolSiC MOSFET technology, the EasyDUAL modules FF11MR12W1M1_B70 and FF6MR12W2M1_B70 offer an increase of the output power or reduces the junction temperatures.

Posted on May 11, 2021 - (458 views)
Infineon Technologies AG
Max-Planck-Strasse 5
59581 Warstein - Germany
+49-2902-7642000
+49-2902-764256
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