Gate Withstand Voltage Marking Technology Increases from 6V to 8V for 150V GaN HEMT

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This breakthrough contributes to lower power consumption and better miniaturization of power supplies for base stations and data centers

Electronics & Electricity, Industrial Equipment & Supplies

Gate Withstand Voltage Marking Technology Increases from 6V to 8V for 150V GaN HEMT
Gate Withstand Voltage Marking Technology Increases from 6V to 8V for 150V GaN HEMT
Gate Withstand Voltage Marking Technology Increases from 6V to 8V for 150V GaN HEMT
Gate Withstand Voltage Marking Technology Increases from 6V to 8V for 150V GaN HEMT
Gate Withstand Voltage Marking Technology Increases from 6V to 8V for 150V GaN HEMT
Gate Withstand Voltage Marking Technology Increases from 6V to 8V for 150V GaN HEMT
Gate Withstand Voltage Marking Technology Increases from 6V to 8V for 150V GaN HEMT
Gate Withstand Voltage Marking Technology Increases from 6V to 8V for 150V GaN HEMT
Gate Withstand Voltage Marking Technology Increases from 6V to 8V for 150V GaN HEMT
Gate Withstand Voltage Marking Technology Increases from 6V to 8V for 150V GaN HEMT

ROHM introduced the industry's highest (8V) gate withstand voltage (rated gate-source voltage) technology for 150V GaN HEMT devices - optimized for industrial and communication equipment power supplies. The growing demand for server systems driven by the increase in Iot devices seen in recent years required improved power conversion efficiency and reduction in power device size. ROHM has therefore expanded its range of power solutions and developed GaN devices with superior high-frequency operation in the medium voltage range.

ROHM successfully increased the gate source voltage rating from 6V to 8V using a original structure

This allows for improved design margin while increasing the reliability of power supply circuits using GaN devices that require high efficiency. In addition to optimizing the performance of devices with low parasitic inductance, ROHM is designing a dedicated package for easy mounting and efficient heat dissipation. This ensures easy replacement of existing silicon devices while facilitating handling during the assembly process. The development of these GaN devices based on this technology will progressively accelerate with sample shipments planned for September 2021.

Possible applications for High 8V Gate Withstand Voltage Marking Technology include 48V input buck converter circuits for data centers and base stations, boost converter circuits for base station power amplifier block, class-D audio amplifiers, and LiDAR control circuits, wireless charging circuits for portable devices.

Posted on June 1, 2021 - (1998 views)
Rohm Semiconductor GmbH
Karl-Arnold-Straße 15
47878 Willich - Germany
+49-2154-9210
+49-2154-921458
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